sot-89-3l 1. base 2. collector 3. emitter transistor(pnp) features z complementary to 2sc2873 z small flat package z power amplifier and switching applications z low saturation voltage z high speed switching time maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = -0.1ma,i e =0 -50 v collector-emitter breakdown voltage v (br)ceo i c =-10ma,i b =0 -50 v emitter-base breakdown voltage v (br)ebo i e =-0.1ma,i c =0 -5 v collector cut-off current i cbo v cb =-50v,i e =0 -100 na emitter cut-off current i ebo v eb =-5v,i c =0 -100 na v ce =-2v, i c =-500ma 70 240 dc current gain h fe v ce =-2v, i c =-2a 20 collector-emitter saturation voltage v ce(sat) i c =-1a,i b =-50ma -0.5 v base-emitter saturation voltage v be(sat) i c =-1a,i b =-50ma -1.2 v collector output capacitance c ob v cb =-10v,i e =0, f=1mhz 40 pf transition frequency f t v ce =-2v,i c = -0.5a 100 mhz classification of h fe rank o y range 70 C 140 120 C 240 marking no ny symbol parameter value unit v cbo collector-base voltage -50 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -5 v i c collector current -2 a p c collector power dissipation 500 mw r ja thermal resistance from junction to ambient 250 / w t j junction temperature 150 t stg storage temperature -55~+150 1 date:2011/05 www.htsemi.com semiconductor jinyu 2sa1 21 3
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